V30DM120 - Vishay

V30DM120 Trench MOS Barrier Schottky Rectifier

www.vishay.com V30DM120 Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.46 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Trench MOS Schottky technology generation 2 Available • Very .

Features

• Trench MOS Schottky technology generation 2 Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commerc.