V30D100C - Vishay

V30D100C Trench MOS Barrier Schottky Rectifier

www.vishay.com V30D100C Vishay General Semiconductor Dual High-Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.46 V at IF = 5.0 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View Anode 1 Anode 2 K Cathode FEATURES • Trench MOS Schottky technology Available • Very low profile - typical height of 1.7 mm • Ideal for aut.

Features

• Trench MOS Schottky technology Available
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• AEC-Q101 qualified available: - Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) 2 x 15 A VRRM IFSM 100 V 150 A VF at IF = 15 A (TA = 125 °C) 0.64 V TJ max. 150 °.