UPD5759T6J - Renesas

UPD5759T6J Low Noise and High Gain Amplifier

R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting. FEATURES • Lo.

Features

• Low noise
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• : NV = −98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ Low input capacitance : Cinput = 2.0 pF TYP. @VDD = 2.0 V, RL = 2.2 kΩ Low consumption current : IDD = 310 μA TYP. @VDD = 2.0 V, RL = 2.2 kΩ High-density surface mounting : 3-pin thin-type lead-less minimold (1.2 × 1.0 × 0.33 mm) Built-in the capacitor for RF noise immunity High ESD voltage APPLICATIONS
• Microphone, Sensor etc. .