PreliminaryData Sheet μPD5753T7G SiGe/CMOS Integrated Circuit 4 × 2 IF Switch Matrix with Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output • 4 × 2 switch matrix with integrated switch control - Tone/Voltage - Switch’s Enable/Disable function is linked with POLA input voltage level • S.
• 4 independent IF channels, integral switching to channel input to either channel output
• 4 × 2 switch matrix with integrated switch control - Tone/Voltage - Switch’s Enable/Disable function is linked with POLA input voltage level
• Switch’s Enable condition : VPOLA > 9.5 V
• Frequency range : f = 250 MHz to 2150 MHz
• High isolation : ISLD/U = 33 dB TYP. @Worst mode
• Insertion loss : LINS = 7 dB TYP. @ ZS = ZL = 50 Ω
• Insertion loss flatness : ΔLINS = 1.0 dB TYP.
• 20-pin 4 × 4 mm square micro lead package ( 20-pin plastic QFN (0.5 mm pitch))
R09DS0014EJ0100 Rev.1.00 Feb 22, 2011
APPLIC.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | UPD5750T7D |
Renesas |
SiGe BiCMOS | |
2 | UPD5754T7A |
Renesas |
SiGe BiCMOS | |
3 | UPD5756T6N |
Renesas |
SiGe BiCMOS | |
4 | UPD5758T6J |
Renesas |
Low Noise and High Gain Amplifier | |
5 | UPD5759T6J |
Renesas |
Low Noise and High Gain Amplifier | |
6 | UPD5702TU |
CEL |
Si LD MOS POWER AMPLIFIER | |
7 | UPD5702TU |
NEC |
3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT | |
8 | UPD5710TK |
CEL |
SINGLE CONTROL CMOS SPDT SWITCH | |
9 | UPD5710TK |
NEC |
WIDE BAND SPDT SWITCH | |
10 | UPD5713TK |
CEL |
WIDE BAND SPDT SWITCH | |
11 | UPD5713TK |
Renesas |
WIDE BAND SPDT SWITCH | |
12 | UPD5715GR |
NEC |
CMOS MMIC 4 x 2 IF SWITCH MATRIX |