Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current TSF21 50 35 50 TSF22 100 70 100 TSF23 150 105 150 2.0 TSF24 200 140 200 TSF25 300 210 300 TSF26 400 280 400 Unit V V V A Conditions VRRM VRMS VDC IAV Ta=55 ˚C 8.3ms single half sine-wave superimposed o.
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• Low forward voltage drop High current capability High reliability High surge current capability High temperature soldering guaranteed 250°C/10 seconds /.0375" (9.5mm) lead length, 5lbs (2.3kg) tension
• RoHS Compliance
DO-15
Mechanical Data
Case: Epoxy: Terminals: Polarity: Weight: DO-15, molded plastic UL 94V-0 rate flame retardant Axial leads, solderable per MIL-STD-202, Method 208 guaranteed Color band denotes cathode end 0.40 gram
Maximum Ratings and Electrical Characteristics (T A=25ºC unless noted otherwise)
Symbol Description Maximum Repetitive Peak Reverse Voltage Maximum .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TSF204D00-S1 |
Token |
Saw Filters | |
2 | TSF2080C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
3 | TSF20H100C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
4 | TSF20H120C |
Taiwan Semiconductor |
Dual High-Voltage Trench MOS Barrier Schottky Rectifier | |
5 | TSF20H120C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
6 | TSF20H150C |
Taiwan Semiconductor |
Trench MOS Barrier Schottky Rectifier | |
7 | TSF20L100C |
INCHANGE |
Schottky Barrier Rectifier | |
8 | TSF20L120C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
9 | TSF20L150C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
10 | TSF20L200C |
Taiwan Semiconductor |
Trench Schottky Rectifier | |
11 | TSF20N50M |
Truesemi |
N-Channel MOSFET | |
12 | TSF20N60MR |
Truesemi |
N-Channel MOSFET |