TPCP8406 MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H) TPCP8406 1. Applications • • Cell Phones Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (2) Low leakage current P-channel IDSS = -10 µA (VDS = -40 V), N-channel IDSS = 10 µA (VDS = 40 V) (3).
(1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (2) Low leakage current P-channel IDSS = -10 µA (VDS = -40 V), N-channel IDSS = 10 µA (VDS = 40 V) (3) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 PS-8 1 2011-03-14 Rev.2.0 TPCP8406 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCP8401 |
Toshiba Semiconductor |
MOSFET | |
2 | TPCP8402 |
Toshiba Semiconductor |
MOSFET | |
3 | TPCP8403 |
Toshiba Semiconductor |
Field Effect Transistor | |
4 | TPCP8404 |
Toshiba |
Field Effect Transistor | |
5 | TPCP8405 |
Toshiba Semiconductor |
Silicon Dual-Channel MOSFET | |
6 | TPCP8407 |
Toshiba Semiconductor |
Silicon Dual-Channel MOSFET | |
7 | TPCP8001-H |
Toshiba Semiconductor |
MOSFET | |
8 | TPCP8002 |
Toshiba Semiconductor |
MOSFET | |
9 | TPCP8003-H |
Toshiba Semiconductor |
MOSFET | |
10 | TPCP8004 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | TPCP8005-H |
Toshiba Semiconductor |
Field Effect Transistor | |
12 | TPCP8006 |
Toshiba Semiconductor |
MOSFET |