TPCP8003-H - Toshiba Semiconductor

TPCP8003-H MOSFET

TPCP8003-H TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) www.DataSheet4U.com TPCP8003-H High Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to a small and thin package High speed switching Small gate charge: QSW = 7.5 nC (typ.) Low dr.

Features

Rating 100 100 ±20 2.2 8.8 1.68 Unit V V V A 2．Source 3．Source 4．Gate JEDEC JEITA TOSHIBA ― ― 2-3V1K Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Drain power dissipation Weight: 0.017 g (typ.) W Circuit Configuration 8 7 6 5 Drain power dissipation 0.84 W Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Tc=25℃) (Note 4) Channel temperature Storage temperature range 3.93 2.2 0.016 150 −55 to 150 mJ A mJ °C °C EAR Tch Tstg 1 8 2 7 3 6 4 5 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. .