TPCP8402 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) www.DataSheet4U.com TPCP8402 Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications • Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) High forward transfer admittance : P Channel |.
GSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg −30 −30 ±20 −3.4 −13.6 1.48 1.23 0.58 0.36 0.75 −1.7 0.12 150 −55~150 Rating 30 30 ±20 4.2 16.8 1.48 1.23 W 0.58 0.36 2.86 2.1 mJ A Unit V V V A JEDEC JEITA TOSHIBA ― ― ― Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 Single-device operation (Note 3a) Single-device value at dual operation(Note 3b) Single-device operation (Note 3a) Single-device value at dual operation(Note 3b) Single pulse avalanche energy(Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel t.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCP8401 |
Toshiba Semiconductor |
MOSFET | |
2 | TPCP8403 |
Toshiba Semiconductor |
Field Effect Transistor | |
3 | TPCP8404 |
Toshiba |
Field Effect Transistor | |
4 | TPCP8405 |
Toshiba Semiconductor |
Silicon Dual-Channel MOSFET | |
5 | TPCP8406 |
Toshiba Semiconductor |
MOSFETs | |
6 | TPCP8407 |
Toshiba Semiconductor |
Silicon Dual-Channel MOSFET | |
7 | TPCP8001-H |
Toshiba Semiconductor |
MOSFET | |
8 | TPCP8002 |
Toshiba Semiconductor |
MOSFET | |
9 | TPCP8003-H |
Toshiba Semiconductor |
MOSFET | |
10 | TPCP8004 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | TPCP8005-H |
Toshiba Semiconductor |
Field Effect Transistor | |
12 | TPCP8006 |
Toshiba Semiconductor |
MOSFET |