TPCP8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TPCP8004 Notebook PC Applications Portable Equipment Applications 0.33 ± 0.05 0.05 M A 8 5 Unit: mm 2.4 ± 0.1 2.8 ± 0.1 • Small footprint due to a small and thin package • High speed switching • Small gate charge: Qg = 26nC (typ.) • Low drain-source ON-resistance: RDS(ON) =.
Repetitive avalanche energy (Note 4) EAR 0.021 mJ Channel temperature Storage temperature range Tch 150 °C Tstg −55 to 150 °C Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semicon.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCP8001-H |
Toshiba Semiconductor |
MOSFET | |
2 | TPCP8002 |
Toshiba Semiconductor |
MOSFET | |
3 | TPCP8003-H |
Toshiba Semiconductor |
MOSFET | |
4 | TPCP8005-H |
Toshiba Semiconductor |
Field Effect Transistor | |
5 | TPCP8006 |
Toshiba Semiconductor |
MOSFET | |
6 | TPCP8007-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
7 | TPCP8008-H |
Toshiba Semiconductor |
Field Effect Transistor | |
8 | TPCP8009 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | TPCP8010 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
10 | TPCP8011 |
Toshiba |
Silicon N-Channel MOSFET | |
11 | TPCP8012 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
12 | TPCP8013 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |