TPCP8005-H - Toshiba Semiconductor

TPCP8005-H Field Effect Transistor

TPCP8005-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H) TPCP8005-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • • • • • • • Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 5.0 nC (typ.) Low drain-source ON-resistance: RDS (ON) = .

Features

V A 1. Source 2. Source 3. Source 4. Gate 5. Drain 6. Drain 7. Drain 8. Drain 1.12 +0.13 -0.12 0.28 +0.1 -0.11 JEDEC JEITA TOSHIBA ― ― 2-3V1K Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Drain power dissipation W Weight: 0.017 g (typ.) Drain power dissipation 0.84 W Circuit Configuration 8 7 6 5 Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 78.7 11 0.137 150 −55 to 150 mJ A mJ °C °C 1 2 3 4 Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/vo.