TPCP8006 - Toshiba Semiconductor

TPCP8006 MOSFET

TPCP8006 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS IV) www.DataSheet4U.com TPCP8006 Notebook PC Applications Portable Equipment Applications 0.33 ± 0.05 Unit: mm 8 0.05 M • • • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 6.5 mΩ (typ.) High forward transfer admittance:|Yfs| = 36 S (t.

Features

1.5 9.1 0.168 150 −55 to 150 mJ A mJ °C °C Unit V V V A S 0.025 S 0.17 ± 0.02 ＋0.1 0.28 －0.11 ＋0.13 1.12 －0.12 ＋0.13 1.12 －0.12 0.28 ＋0.1 －0.11 1,2,3 ：SOURCE 4 ：GATE 5,6,7,8：DRAIN Drain power dissipation (t = 5 s) (Note 2a) JEDEC JEITA TOSHIBA ⎯ ⎯ 2-3V1K Weight: 0.017g(typ.) Circuit Configuration 8 7 6 5 Note: For Notes 1 to 5, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating co.