MOSFETs Silicon N-channel MOS (U-MOS) TPCP8013 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 41.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth =.
(1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 41.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8013 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.5.0 TPCP8013 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPCP8010 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
2 | TPCP8011 |
Toshiba |
Silicon N-Channel MOSFET | |
3 | TPCP8012 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | TPCP8001-H |
Toshiba Semiconductor |
MOSFET | |
5 | TPCP8002 |
Toshiba Semiconductor |
MOSFET | |
6 | TPCP8003-H |
Toshiba Semiconductor |
MOSFET | |
7 | TPCP8004 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
8 | TPCP8005-H |
Toshiba Semiconductor |
Field Effect Transistor | |
9 | TPCP8006 |
Toshiba Semiconductor |
MOSFET | |
10 | TPCP8007-H |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
11 | TPCP8008-H |
Toshiba Semiconductor |
Field Effect Transistor | |
12 | TPCP8009 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |