TPCP8012 - Toshiba Semiconductor

TPCP8012 Silicon N-Channel MOSFET

MOSFETs Silicon N-channel MOS (U-MOS) TPCP8012 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 10 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 16.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = .

Features

(1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 10 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 16.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8012 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.6.0 TPCP8012 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source .