TPC8106-H - Toshiba Semiconductor

TPC8106-H P-Channel MOSFET

TPC8106-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TPC8106−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package High speed switching Small gate charge Low drain−source ON resistance : Qg .

Features

ain power dissipation Drain power dissipation Circuit Configuration Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-02-06 TPC8106-H Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a.