TPC8103 - Toshiba Semiconductor

TPC8103 P-Channel MOSFET

TPC8103 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPC8103 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs Unit: mm l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.) l High forward transfer admittance: |Yfs| = 20 S (typ.) l Low leakage current.

Features

150 V V V A W W mJ A mJ °C °C Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. JEDEC ― JEITA ― TOSHIBA 2-6J1B Weight: 0.080 g (typ.) Circuit Configuration 1 2003-02-20 Thermal Characteristics Characteristics Symbol Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) Rth (ch-a) Max 52.1 125 Unit °C/W °C/W Marking (Note 5) TPC8103 TPC8103 ※ Type Lot No. Note 1: Please use dev.