TPC8110 - Toshiba Semiconductor

TPC8110 P-Channel MOSFET

TPC8110 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPC8110 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 17 mΩ (typ.) High forward transfer admittance: |Yfs| = 16 S (typ.) Low leakage curr.

Features

nnel temperature Storage temperature range JEITA TOSHIBA Weight: 0.080 g (typ.) Circuit Configuration 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 4 1 2002-05-24 TPC8110 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 65.8 125 Unit °C/W °C/W Marking (Note 5) TPC8110 ※ Type Note 1: Please use devices on condi.