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TPC8106-H |
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| Part Number | TPC8106-H |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TPC8106-H TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII) TPC8106−H High Speed and High Efficiency DC−DC Converters Lithium Ion Battery Applications Notebook PC Applic... |
| Features |
ain power dissipation Drain power dissipation
Circuit Configuration
Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-02-06
TPC8106-H
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a... |
| Document |
 TPC8106-H Data Sheet
PDF 512.97KB |
| Distributor | Stock | Price | Buy |
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