TPC8108 - Toshiba Semiconductor

TPC8108 P-Channel MOSFET

TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage curr.

Features

pation W 1.0 W Weight: 0.080 g (typ.) 157 −11 0.19 150 −55 to 150 mJ A mJ °C °C Circuit Configuration 8 7 6 5 Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 4 1 2002-03-12 TPC8108 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Symbol Rth (ch-a) Max 65.8 Unit °C/W Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Rth (ch-a) 125 °C/W Marking (Note 5) TPC8108 TYPE Note 1: Please use device.