TPC8115 www.DataSheet4U.com TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPC8115 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 6.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 40 S (ty.
Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Circuit Configuration W mJ A mJ °C °C 8 7 6 5 1 2 3 4 Note: (Note 1), (Note 2), (Note 3) and (Note 4): See the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliabil.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TPC8110 |
Toshiba Semiconductor |
P-Channel MOSFET | |
2 | TPC8111 |
Toshiba Semiconductor |
P-Channel MOSFET | |
3 | TPC8112 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
4 | TPC8113 |
Toshiba Semiconductor |
P-Channel MOSFET | |
5 | TPC8114 |
Toshiba Semiconductor |
P-Channel MOSFET | |
6 | TPC8116-H |
Toshiba Semiconductor |
P-Channel MOSFET | |
7 | TPC8117 |
Toshiba Semiconductor |
Silicon P-Channel MOSFET | |
8 | TPC8118 |
Toshiba Semiconductor |
P-Channel MOSFET | |
9 | TPC8119 |
Toshiba Semiconductor |
P-Channel MOSFET | |
10 | TPC8102 |
Toshiba Semiconductor |
P-Channel MOSFET | |
11 | TPC8103 |
Toshiba Semiconductor |
P-Channel MOSFET | |
12 | TPC8105-H |
Toshiba Semiconductor |
P-Channel MOSFET |