TK40S10K3Z MOSFETs Silicon N-channel MOS (U-MOS) TK40S10K3Z 1. Applications • • • • Automotive Motor Drivers DC-DC Converters Switching Voltage Regulators 2. Features (1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to .
(1) (2) (3) (4) AEC-Q101 qualified Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (heatsink) 3: Source DPAK+ Start of commercial production 1 2011-03 2014-08-04 Rev.5.0 TK40S10K3Z 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Aval.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK40S06N1L |
Toshiba |
N-channel MOSFET | |
2 | TK40A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | TK40A06N1 |
INCHANGE |
N-Channel MOSFET | |
4 | TK40A08K3 |
Toshiba Semiconductor |
MOSFET | |
5 | TK40A10J1 |
Toshiba Semiconductor |
MOSFET | |
6 | TK40A10K3 |
Toshiba Semiconductor |
Field Effect Transistor | |
7 | TK40A10N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
8 | TK40A10N1 |
INCHANGE |
N-Channel MOSFET | |
9 | TK40D10J1 |
Toshiba Semiconductor |
MOSFET | |
10 | TK40E06N1 |
INCHANGE |
N-Channel MOSFET | |
11 | TK40E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
12 | TK40E10N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |