MOSFETs Silicon N-channel MOS (U-MOS-H) TK40E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK40E10N1 1: Gat.
(1) Low drain-source on-resistance: RDS(ON) = 6.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK40E10N1 1: Gate 2: Drain (heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage .
isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK40E10N1,ITK40E10N1 ·FEATURES ·Low drain-source on-resistance:.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | TK40E06N1 |
INCHANGE |
N-Channel MOSFET | |
2 | TK40E06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
3 | TK40A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
4 | TK40A06N1 |
INCHANGE |
N-Channel MOSFET | |
5 | TK40A08K3 |
Toshiba Semiconductor |
MOSFET | |
6 | TK40A10J1 |
Toshiba Semiconductor |
MOSFET | |
7 | TK40A10K3 |
Toshiba Semiconductor |
Field Effect Transistor | |
8 | TK40A10N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
9 | TK40A10N1 |
INCHANGE |
N-Channel MOSFET | |
10 | TK40D10J1 |
Toshiba Semiconductor |
MOSFET | |
11 | TK40J20D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET | |
12 | TK40J60T |
Toshiba Semiconductor |
N-Channel MOSFET |