Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
Isc N-Channel MOSFET Transistor TK40E06N1 ·FEATURES ·Low drain-source on-resistance: RDS(ON) =10.4mΩ (VGS = 10 V) ·Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃).
·Low drain-source on-resistance:
RDS(ON) =10.4mΩ (VGS = 10 V)
·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.3mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
40
A
IDM
Drain Current-Single Pulsed
125
A
PD
Total Dissipation @TC=25℃
67
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature.
TK40E06N1 - Toshiba Semiconductor
TK40E06N1 MOSFETs Silicon N-channel MOS (U-MOS-H) TK40E06N1 1. Applications • Switching Voltage Regulators 2. Feature.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TK40E10N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 2 | TK40E10N1 |
INCHANGE |
N-Channel MOSFET |
|
| 3 | TK40A06N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 4 | TK40A06N1 |
INCHANGE |
N-Channel MOSFET |
|
| 5 | TK40A08K3 |
Toshiba Semiconductor |
MOSFET |
|
| 6 | TK40A10J1 |
Toshiba Semiconductor |
MOSFET |
|
| 7 | TK40A10K3 |
Toshiba Semiconductor |
Field Effect Transistor |
|
| 8 | TK40A10N1 |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 9 | TK40A10N1 |
INCHANGE |
N-Channel MOSFET |
|
| 10 | TK40D10J1 |
Toshiba Semiconductor |
MOSFET |
|
| 11 | TK40J20D |
Toshiba Semiconductor |
Silicon N-Channel MOSFET |
|
| 12 | TK40J60T |
Toshiba Semiconductor |
N-Channel MOSFET |
|