TK40D10J1 - Toshiba Semiconductor

TK40D10J1 MOSFET

www.DataSheet4U.com TK40D10J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra-High-Speed U-MOSⅢ) TK40D10J1 Switching Regulator Applications 10.0±0.3 Unit: mm 9.5±0.2 A 0.6±0.1 Ф3.65±0.2 • • • • • Small gate charge: Qg = 76nC (typ.) Low drain-source ON-resistance: RDS (ON) = 11.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 90 S.

Features

urrent Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range JEDEC JEITA TOSHIBA ⎯ ⎯ 2-10V1A Weight: 1.35 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Han.