TK40S06N1L - Toshiba

TK40S06N1L N-channel MOSFET

MOSFETs Silicon N-channel MOS (U-MOS-H) TK40S06N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.7 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) .

Features

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 8.7 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TK40S06N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2018-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-06 2020-06-24 Rev.5.0 TK40S06N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltag.