TGF4230-EEU - TriQuint Semiconductor

TGF4230-EEU 1.2mm Discrete HFET

The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class AB operation. Bond - pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermoson.

Features

ps) C TA = 25° 0.25 Drain Current (A) 0.2 0.15 0.1 0.05 0 0 1 2 3 4 5 6 7 8 9 10 Drain Voltage (V) OUTPUT POWER VS. INPUT POWER Output Power (dBm) 30 28 26 24 F = 8.5GHz V D =8.0V I Q =50mA
* C T A =25° 22 20 18 16 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) Note: I Q is defined as the drain current before application of RF signal at the input. POWER ADDED EFFICIENCY VS. INPUT POWER 60 55 50 45 40 F = 8.5GHz V D =8.0V I Q =50mA
* C T A =25° PAE (%) 35 30 25 20 15 10 5 4 6 8 10 12 14 16 18 20 22 Input Power (dBm) 2 TriQuint Semiconductor, Inc.
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