TGF4230-SCC - TriQuint Semiconductor

TGF4230-SCC 1.2 mm HFET

www.DataSheet.net/ The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Bond-pad and backside metalization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression a.

Features

and Performance
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• Nominal Pout of 28.5 dBm at 8.5 GHz Nominal Gain of 10.0 dB at 8.5 GHz Nominal PAE of 55 % at 8.5 GHz 1200 µm HFET 0.61 x 0.74 x 0.1 mm (0.024 x 0.029 x 0.004 in) Bias at 8 Volts, 96 mA Primary Applications
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• Cellular Base Stations High dynamic-range LNAs Military and Space Description www.DataSheet.net/ The TriQuint TGF4230-SCC is a single gate 1.2 mm Discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high-efficiency power applications up to 12 GHz in Class A and Class AB operation. Bond-pad and backside metalization is gold plated fo.