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TGF4230-EEU |
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| Part Number | TGF4230-EEU |
| Manufacturer | TriQuint Semiconductor |
| Description | The Triquint TGF4230 - EEU is a single gate 1.2 mm Discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high- efficiency power applications up to 1 2- GHz in Class A and Class A... |
| Features |
ps) C TA = 25°
0.25
Drain Current (A)
0.2
0.15
0.1
0.05
0 0 1 2 3 4 5 6 7 8 9 10
Drain Voltage (V)
OUTPUT POWER VS. INPUT POWER Output Power (dBm)
30 28
26 24
F = 8.5GHz V D =8.0V I Q =50mA* C T A =25°
22 20 18 16 4 6 8 10 12 14 16 18 20 22
Input Power (dBm) Note: I Q is defined as the drain current before application of RF signal at the input.
POWER ADDED EFFICIENCY VS. INPUT POWER
60
55 50
45 40
F = 8.5GHz V D =8.0V I Q =50mA* C T A =25°
PAE (%)
35 30 25 20 15
10 5 4 6 8 10 12 14 16 18 20 22
Input Power (dBm)
2
TriQuint Semiconductor, Inc.
• Texas Facilities • (972)... |
| Document |
 TGF4230-EEU Data Sheet
PDF 178.78KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | TGF4230-SCC |
TriQuint Semiconductor |
1.2 mm HFET |
|
| 2 | TGF4240-EPU |
TriQuint Semiconductor |
2.4mm Discrete HFET |
|
| 3 | TGF4240-SCC |
TriQuint Semiconductor |
2.4 mm HFET |
|
| 4 | TGF4250-EEU |
TriQuint Semiconductor |
4.8 mm Discrete HFET |
|
| 5 | TGF4250-SCC |
TriQuint Semiconductor |
4.8 mm HFET |
|