TGF4112-EPU - TriQuint Semiconductor

TGF4112-EPU 12 mm Discrete HFET

TGF4112-EPU 12 mm Discrete HFET  4112 • • • • • 0.5 um gate finger length Nominal Pout of 6.0 Watts at 2.3 GHz Nominal PAE of 54.5% at 2.3 GHz Nominal Gain of 12.7 dB at 2.3 GHz Die size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm) TGF4112-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.3 V, Iq = 0.75 A and T A = 25°C 46 Pout 44 42 40 38 36.

Features

1V Vg = -1.3 V Vg = -1.5 V 30 29 28 27 14 13 Gain (dB) 12 11 10 9 8 14 15 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 16 17 18 19 20 21 22 23 Input Power (dBm) 24 25 26 27 28 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com TGF4112-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 0.92 A (Vg = -1.1 V), 0.75 A (Vg = -1.3 V), and 0.65 A (Vg = -1.5 V) 140 130 Predicted Channel Temp (°C) 120 110 100 90 80 70 60 50 40 30 60 55 Power Added Efficiency % 50 45 40 35 30 25 20 15 10 5 15 Vg = -1.1V Vg = -1.3 V Vg = -1.5 V 38 37 36 Output P.