TGF4118-EPU - TriQuint Semiconductor

TGF4118-EPU 18 mm Discrete HFET

TGF4118-EPU 18 mm Discrete HFET  4118 • • • • • 0.5 um gate finger length Nominal Pout of 9.0 Watts at 2.3 GHz Nominal PAE of 53% at 2.3 GHz Nominal Gain of 11.5 dB at 2.3 GHz Die Size 36.0 x 81.0 x 4.0 mils (0.914 x 2.057 x 0.102 mm) TGF4118-EPU RF Performance at F = 2.3 GHz Vd = 8.0 V, Vg = -1.1 V, Iq = 1.69 A and T A = 25°C 50 Pout 48 46 PAE 50 45 4.

Features

14 13 Gain (dB) 12 11 10 9 8 7 20 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 21 22 23 24 25 26 27 Input Power (dBm) 28 29 30 31 TriQuint Semiconductor Texas Phone: 972 994-8465 Fax 972 994-8504 Web: www.triquint.com TGF4118-EPU RF Performance for Vd = 8.0 V, F = 2.3 GHz, and TA = 25° C Quiescent Id is 1.69 A (Vg = -1.1 V), 1.38 A (Vg = -1.3 V), and 1.06 A (Vg = -1.5 V) 140 130 Predicted Channel Temp (°C) 120 110 100 90 80 Pout 70 60 50 40 60 55 Power Added Efficiency % 50 45 40 35 30 25 20 15 15 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 42 41 40 39 38 Tch 37 36 35 Vg = -1.1 V Vg = -1.3 V Vg = -1.5 V 3.