TGF4250-EEU - TriQuint Semiconductor

TGF4250-EEU 4.8 mm Discrete HFET

The TriQuint TGF4250-EEU is a single gate 4.8 mm discrete GaAs Heterostructure Field Ef fect Transistor (HFET) designed for high ef ficiency power applications up to 10. 5- GHz in Class A and Class AB operation. Typical performance at 2- GHz is 34 - dBm power output, 13 - dB gain, and 63% PAE. Bond pad and backside metalization is gold plated for compat ibi.

Features

t.com TGF4250-EEU p EXAMPLE OF DC I-V CURVES 1.1 1 0.9 VG = 0.0 to -2.25 V (0.25 V steps) T A=65°C Drain Current (A) 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0 1 2 3 4 5 6 7 8 9 10 Drain Voltage (V) OUTPUT POWER VS. INPUT POWER Output Power (dBm) 36 34 32 30 28 26 24 F =8.5 GHz VD =8.0 V I Q =200 mA
* T A =25°C 22 20 10 12 14 16 18 20 22 24 26 28 Input Power (dBm)
* I Q is defined as the drain current before application of RF signal at the input. POWER ADDED EFFICIENCY VS. INPUT POWER 55 50 45 40 35 F =8.5 GHz VD =8.0 V I Q =200 mA T A =25°C PAE (%) 30 25 20 15 10 5 0 10 12 14 16 18 .