SiZ988DT - Vishay

SiZ988DT Dual N-Channel MOSFETs

www.vishay.com SiZ988DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) () (MAX.) 0.0075 at VGS = 10 V 0.0120 at VGS = 4.5 V 0.0041 at VGS = 10 V 0.0052 at VGS = 4.5 V ID (A) 40 g 32 g 60 60 Qg (TYP.) 6.9 nC 15.4 nC PowerPAIR® 6 x 5 G2 S2 S2 S2 6 7 8 5 S1/D2 (Pin 9) 6 mm 1 5 mm To.

Features

• TrenchFET® Gen IV power MOSFETs
• 100 % Rg and UIS tested
• Optimized Qgs/Qgs ratio improves switching characteristics
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• CPU core power
• Computer / server peripherals
• POL
• Synchronous buck converter
• Telecom DC/DC D1 G1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL CHANNEL-1 CH.