SIZ914DT - Vishay

SIZ914DT Dual N-Channel MPSFET

SiZ914DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) RDS(on) () (Max.) 0.00640 at VGS = 10 V 30 0.01000 at VGS = 4.5 V 30 0.00137 at VGS = 10 V 0.00194 at VGS = 4.5 V ID (A)g Qg (Typ.) 16a 7.2 nC 16a 40a 30.1 nC 40a PowerPAIR® 6 x 5 Pin 1 1 G2 8 7 S1/D2 Pin 9 S2 6 5 G1 D1 2 D1 3 5 mm D1 D1 4 6 m.

Features

• TrenchFET® Gen IV Power MOSFETs
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D1
• CPU Core Power
• Computer/Server Peripherals
• Synchronous Buck Converter G1
• POL
• Telecom DC/DC N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 100 µs) Continuous Source Drain Diode Current Single Pulse Avalanch.