SIZ910DT - Vishay

SIZ910DT Dual N-Channel MPSFET

SiZ910DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) () (Max.) Channel-1 0.0058 at VGS = 10 V 30 0.0075 at VGS = 4.5 V Channel-2 30 0.0030 at VGS = 10 V 0.0035 at VGS = 4.5 V ID (A) 40a 40a 40a 40a Qg (Typ.) 12.5 nC 29 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFE.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Notebook System Power
• POL
• Synchronous Buck Converter PowerPAIR® 6 x 5 Pin 1 1 G2 8 7 S1/D2 Pin 9 S2 6 5 G1 D1 2 D1 3 5 mm D1 D1 4 6 mm Ordering Information: SiZ910DT-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage Gate-Source Voltage VD.