SIZ900DT - Vishay

SIZ900DT Dual N-Channel MPSFET

New Product SiZ900DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) () Channel-1 0.0072 at VGS = 10 V 30 0.0092 at VGS = 4.5 V Channel-2 0.0039 at VGS = 10 V 30 0.0047 at VGS = 4.5 V ID (A) 24a 24a 28a 28a Qg (Typ.) 13.5 nC 34 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power M.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFETs
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Notebook System Power
• POL
• Synchronous Buck Converter PowerPAIR® 6 x 5 Pin 1 G1 1 D1 5 mm 2 D1 D1 3 D1 G2 8 S2 S1/D2 Pin 9 7 S2 6 S2 4 6 mm 5 Ordering Information: SiZ900DT-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Channel-1 Channel-2 Drain-Source Voltage Gate-Source Voltage.