SiZ980DT - Vishay

SiZ980DT Dual N-Channel MOSFET

www.vishay.com SiZ980DT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY Channel-1 Channel-2 VDS (V) 30 30 RDS(on) () (MAX.) 0.0067 at VGS = 10 V 0.0100 at VGS = 4.5 V 0.0016 at VGS = 10 V 0.0022 at VGS = 4.5 V ID (A) 20 a 20 a 60 a 60 a Qg (TYP.) 5.4 nC 21 nC PowerPAIR® 6 x 5 G2 S2 S2 S2 6 7 8 5 S1/D2 (Pi.

Features

• TrenchFET® Gen IV power MOSFET
• SkyFET® low-side MOSFET with integrated Schottky
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• CPU core power
• Computer / server peripherals G1
• POL N-Channel 1
• Synchronous buck converter MOSFET
• Telecom DC/DC G2 N-Channel 2 MOSFET D1 S1/D2 Schottky Diode S2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PA.