SiZ980BDT - Vishay

SiZ980BDT Dual N-Channel MOSFET

www.vishay.com SiZ980BDT Vishay Siliconix Dual N-Channel 30 V (D-S) MOSFET with Schottky Diode PowerPAIR® 6 x 5 G2 S2 S2 S2 6 7 8 5 S1/D2 (Pin 9) 6 mm 1 5 mm Top View D1 1 4 D1 3 D1 2 D1 G1 Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration CHANNEL-1 CHANNEL.

Features

• TrenchFET® Gen IV power MOSFET
• SkyFET® low side MOSFET with integrated Schottky
• Very low RDS x Qg FOM improves efficiency
• 100 % Rg and UIS tested
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• CPU core power D1
• Computer / server peripherals
• POL
• Synchronous buck converter G1 N-Channel 1 MOSFET S1/D2
• Telecom DC/DC Schottky G2 Diode N-Channel 2 MOSFET S2 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAIR 6 x 5 SiZ980BDT-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) .