www.vishay.com SiSS5710DN Vishay Siliconix N-Channel 150 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration 1 4 3 S 2 S S G Bottom View 150 0.0315 0.037 7.7 26.2 Single FEATURES • TrenchFET® Ge.
• TrenchFET® Gen V power MOSFET
• Very low RDS x Qg figure of merit (FOM)
• Tuned for the lowest RDS x Qoss FOM
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
D
• Synchronous rectification
• Primary side switch
• DC/DC converters
• OR-ing and hot swap switch
G
• Power supplies
• Motor drive control
• Battery management
N-Channel MOSFET S
ORDERING INFORMATION
Package Lead (Pb)-free and halogen-free
PowerPAK 1212-8S SISS5710DN-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARA.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiSS5708DN |
Vishay |
N-Channel MOSFET | |
2 | SiSS5112DN |
Vishay |
N-Channel MOSFET | |
3 | SiSS5623DN |
Vishay |
P-Channel MOSFET | |
4 | SiSS5808DN |
Vishay |
N-Channel MOSFET | |
5 | SiSS5812DN |
Vishay |
N-Channel MOSFET | |
6 | SiSS588DN |
Vishay |
N-Channel MOSFET | |
7 | SiSS05DN |
Vishay |
P-Channel MOSFET | |
8 | SiSS10DN |
Vishay |
N-Channel MOSFET | |
9 | SiSS12DN |
Vishay |
N-Channel MOSFET | |
10 | SiSS178LDN |
Vishay |
N-Channel MOSFET | |
11 | SiSS23DN |
Vishay |
P-Channel 20V (D-S) MOSFET | |
12 | SiSS27ADN |
Vishay |
P-Channel 30V (D-S) MOSFET |