SiR4406DP - Vishay

SiR4406DP N-Channel MOSFET

www.vishay.com SiR4406DP Vishay Siliconix N-Channel 40 V (D-S) MOSFET PowerPAK® SO-8 Single D D8 D7 D6 5 6.15 mm 1 5.15 mm Top View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration 1 2S 3S 4S G Bottom View 40 0.00475 0.0067 10.9 78 Single FEATURES • TrenchFET® Gen IV power MO.

Features

• TrenchFET® Gen IV power MOSFET
• 100 ^% Rg and UIS tested
• Qgd / Qgs ratio < 1 optimizes switching characteristics
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• Synchronous rectification
• High power density DC/DC
• DC/AC inverters D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8 SiR4406DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) VDS VGS TC = 25 °.