SIR406DP - Vishay

SIR406DP N-Channel MOSFET

New Product N-Channel 25-V (D-S) MOSFET SiR406DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0038 at VGS = 10 V 25 0.0048 at VGS = 4.5 V ID (A)a 40g 40g Qg (Typ.) 15.8 nC PowerPAK® SO-8 FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Gen III Power MOSFET • 100 % Rg Tested • 100 % Avalanche Tested • Compliant to.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Gen III Power MOSFET
• 100 % Rg Tested
• 100 % Avalanche Tested
• Compliant to RoHS Directive 2002/95/EC 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR406DP-T1-GE3 (Lead (Pb)-free and Halogen-free) APPLICATIONS
• POL
• Server
• DC/DC D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Puls.