SiR426DP - Vishay

SiR426DP N-Channel MOSFET

N-Channel 40-V (D-S) MOSFET SiR426DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.0105 at VGS = 10 V 40 0.0125 at VGS = 4.5 V ID (A) 30a 30a Qg (Typ.) 9.3 nC PowerPAK SO-8 6.15 mm S 1S 5.15 mm 2 S 3G 4 D 8D 7 D 6 D 5 Bottom View Ordering Information: SiR426DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • TrenchFET® Power MOSFE.

Features

• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS
• DC/DC Converters - Synchronous Buck - Synchronous Rectifier D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 40 Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C VGS ID ± 20 30a 30a 15.9b, c 12.8b, c Pulsed Drain Current IDM 70 Avalanche Current Avalanche Energy Continuous Source-Drain.