SIR414DP - Vishay Siliconix

SIR414DP N-Channel MOSFET

New Product SiR414DP Vishay Siliconix N-Channel 40-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.0028 at VGS = 10 V 0.0032 at VGS = 4.5 V ID (A)a 50 50 Qg (Typ.) 38 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 .

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested PowerPAK® SO-8 APPLICATIONS 6.15 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 5.15 mm
• Synchronous Rectification
• Secondary Side DC/DC D G Bottom View Ordering Information: SiR414DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Temperatu.