SIR410DP - Vishay Siliconix

SIR410DP N-Channel MOSFET

SiR410DP Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.0048 at VGS = 10 V 0.0063 at VGS = 4.5 V ID (A)a 35 12.7 nC 35 Qg (Typ.) FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested PowerPAK® SO-8 APPLICATIONS • DC/DC Converter - Notebook - POL D 6.15 mm S 1 2 3 S S 5.15 mm G 4 .

Features

• Halogen-free
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested PowerPAK® SO-8 APPLICATIONS
• DC/DC Converter - Notebook - POL D 6.15 mm S 1 2 3 S S 5.15 mm G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR410DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS.