SIR402DP - Vishay Siliconix

SIR402DP N-Channel MOSFET

N-Channel 30-V (D-S) MOSFET SiR402DP Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.006 at VGS = 10 V 30 0.008 at VGS = 4.5 V PowerPAK SO-8 ID (A)a 35 35 Qg (Typ.) 12 nC 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: SiR402DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Synchronous Rectification
• DC/DC Point-of-Load
• Server D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1 mH Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC .