N-Channel 100-V (D-S) MOSFET SiR432DP Vishay Siliconix PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) 0.0306 at VGS = 10 V 0.0327 at VGS = 7.5 V ID (A)a 28.4 27.5 Qg (Typ.) 15.5 nC PowerPAK SO-8 6.15 mm D 8D 7 D 6 D 5 S 1S 5.15 mm 2 S 3 G 4 Bottom View Ordering Information: SiR432DP-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free Ac.
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• 100 % UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temper.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SIR436DP |
Vishay Siliconix |
N-Channel MOSFET | |
2 | SIR438DP |
Vishay Siliconix |
N-Channel MOSFET | |
3 | SIR402DP |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SiR404DP |
Vishay |
N-Channel MOSFET | |
5 | SIR406DP |
Vishay |
N-Channel MOSFET | |
6 | SIR410DP |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SIR414DP |
Vishay Siliconix |
N-Channel MOSFET | |
8 | SiR4156LDP |
Vishay |
N-Channel MOSFET | |
9 | SIR416DP |
Vishay |
N-Channel 40-V (D-S) MOSFET | |
10 | SIR418DP |
Vishay |
N-Channel 40-V (D-S) MOSFET | |
11 | SIR422DP |
Vishay |
N-Channel 40-V (D-S) MOSFET | |
12 | SiR424DP |
Vishay |
N-Channel MOSFET |