New Product SiR438DP Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) 0.0018 at VGS = 10 V 0.0023 at VGS = 4.5 V ID (A)a, g 60 60 Qg (Typ.) 32.6 nC FEATURES • • • • Halogen-free According to IEC 61249-2-21 TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % Avalanche Tested PowerPAK® SO-8 APPLICATIONS • Server - Low .
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• Halogen-free According to IEC 61249-2-21 TrenchFET® Gen III Power MOSFET 100 % Rg Tested 100 % Avalanche Tested
PowerPAK® SO-8
APPLICATIONS
• Server - Low Side
6.15 mm
S 1 2 3 S S
5.15 mm D
G 4
D 8 7 6 5 D D D
G
Bottom View Ordering Information: SiR438DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID Limit 25 ± 20 60a.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiR432DP |
Vishay |
N-Channel 100-V (D-S) MOSFET | |
2 | SIR436DP |
Vishay Siliconix |
N-Channel MOSFET | |
3 | SIR402DP |
Vishay Siliconix |
N-Channel MOSFET | |
4 | SiR404DP |
Vishay |
N-Channel MOSFET | |
5 | SIR406DP |
Vishay |
N-Channel MOSFET | |
6 | SIR410DP |
Vishay Siliconix |
N-Channel MOSFET | |
7 | SIR414DP |
Vishay Siliconix |
N-Channel MOSFET | |
8 | SiR4156LDP |
Vishay |
N-Channel MOSFET | |
9 | SIR416DP |
Vishay |
N-Channel 40-V (D-S) MOSFET | |
10 | SIR418DP |
Vishay |
N-Channel 40-V (D-S) MOSFET | |
11 | SIR422DP |
Vishay |
N-Channel 40-V (D-S) MOSFET | |
12 | SiR424DP |
Vishay |
N-Channel MOSFET |