SiC10A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A Features Temperature Independent Switching Behavior Low Conduction and Switching Loss High Surge Current Capability Positive Temperature Coefficient on VF Fast Reverse Recovery Mechanical Data Case: Molded plastic, TO-263 Marking: 10A065ND Benefits High Frequency Op.
Temperature Independent Switching Behavior
Low Conduction and Switching Loss
High Surge Current Capability
Positive Temperature Coefficient on VF
Fast Reverse Recovery
Mechanical Data
Case: Molded plastic, TO-263
Marking: 10A065ND
Benefits
High Frequency Operation
Higher System Efficiency
Environmental Protection
Parallel Device Convenience
Hard Switching & High Reliability
High Temperature Application
TO-263
Unit: inch(mm)
Maximum Ratings
PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage
Continuous Forward Curren.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SiC10A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
2 | SiC10A120T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
3 | SIC101 |
SIC |
SMART-IC | |
4 | SIC10120PTA |
MCC |
Schottky Barrier Rectifier | |
5 | SIC10C60 |
CITC |
10A SiC Schottky Diode | |
6 | SIC12C60 |
CITC |
12A SiC Schottky Diode | |
7 | SIC02A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
8 | SIC02A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
9 | SIC02A120S |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
10 | SIC02C60 |
CITC |
2A SiC Schottky Diode | |
11 | SIC04A065ND |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE | |
12 | SIC04A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |