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SIC12C60 12A SiC Schottky Diode ■ Features • Low Conduction and Switching Loss • Positive Temperature Coefficient on Vf • Temperature Independent Switching Behavior • Fast Reverse Recovery • High Surge Current Capability • Pb-free lead plating ■ Outline ■ Benefits • Higher System Efficiency • Parallel Device Convenience • High Temperature Application • Hi.
• Low Conduction and Switching Loss
• Positive Temperature Coefficient on Vf
• Temperature Independent Switching Behavior
• Fast Reverse Recovery
• High Surge Current Capability
• Pb-free lead plating
■ Outline
■ Benefits
• Higher System Efficiency
• Parallel Device Convenience
• High Temperature Application
• High Frequency Operation
• Hard Switching & High Reliability
• Environmental Protection
■ Applications
• SMPS
• PFC
• Solar/Wind Renewable Energy
• Power Inverters
• Motor Drives
12
Package TO-220-2L
12
Inner Circuit
■ Maximum ratings and electrical characteristics
Parameter
Condi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SIC101 |
SIC |
SMART-IC |
|
| 2 | SIC10120PTA |
MCC |
Schottky Barrier Rectifier |
|
| 3 | SiC10A065ND |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 4 | SiC10A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 5 | SiC10A120T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 6 | SIC10C60 |
CITC |
10A SiC Schottky Diode |
|
| 7 | SIC02A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 8 | SIC02A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 9 | SIC02A120S |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 10 | SIC02C60 |
CITC |
2A SiC Schottky Diode |
|
| 11 | SIC04A065ND |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 12 | SIC04A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|