SIC04A065ND - Pan Jit International

SIC04A065ND SILICON CARBIDE SCHOTTKY DIODE

SiC04A065ND SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 4A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Molded plastic, TO-263  Marking: 04A065ND Benefits  High Frequency Ope.

Features

 Temperature Independent Switching Behavior
 Low Conduction and Switching Loss
 High Surge Current Capability
 Positive Temperature Coefficient on VF
 Fast Reverse Recovery Mechanical Data
 Case: Molded plastic, TO-263
 Marking: 04A065ND Benefits
 High Frequency Operation
 Higher System Efficiency
 Environmental Protection
 Parallel Device Convenience
 Hard Switching & High Reliability
 High Temperature Application TO-263 Unit: inch(mm) Maximum Ratings PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Curren.