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SIC02C60 2A SiC Schottky Diode Main Product Characteristics IF(AV) VRRM TJ VF(Typ) 3.5A,Tc=135OC 2A, Tc=164OC 600V 175OC 1.5V ■ Outline Case Case ■ Features • Low Conduction and Switching Loss • Positive Temperature Coefficient on VF • Temperature Independent Switching Behavior • Fast Reverse Recovery • High Surge Current Capability • Pb-free lead plat.
• Low Conduction and Switching Loss
• Positive Temperature Coefficient on VF
• Temperature Independent Switching Behavior
• Fast Reverse Recovery
• High Surge Current Capability
• Pb-free lead plating
PIN1 PIN2
Package TO-220-2L
PIN1
PIN2
Inner Circuit
■ Benefits
• Higher System Efficiency
• Parallel Device Convenience
• High Temperature Application
• High Frequency Operation
• Hard Switching & High Reliability
• Environmental Protection
■ Maximum ratings and electrical characteristics
■ Applications
• SMPS
• PFC
• Solar/Wind Renewable Energy
• Power Inverters
• Motor Drives
Parameter
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | SIC02A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 2 | SIC02A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 3 | SIC02A120S |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 4 | SIC04A065ND |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 5 | SIC04A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 6 | SIC04A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 7 | SIC04C60 |
CITC |
4A SiC Schottky Diode |
|
| 8 | SIC05120B |
MCC |
Schottky Barrier Rectifier |
|
| 9 | SiC06A065ND |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 10 | SiC06A065NS |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 11 | SiC06A065T |
Pan Jit International |
SILICON CARBIDE SCHOTTKY DIODE |
|
| 12 | SIC06C60 |
CITC |
6A SiC Schottky Diode |
|