SiC10A065T - Pan Jit International

SiC10A065T SILICON CARBIDE SCHOTTKY DIODE

SiC10A065T SILICON CARBIDE SCHOTTKY DIODE Voltage 650 V Current 10 A Features  Temperature Independent Switching Behavior  Low Conduction and Switching Loss  High Surge Current Capability  Positive Temperature Coefficient on VF  Fast Reverse Recovery Mechanical Data  Case: Molded plastic, TO-220AC  Marking: 10A065T Benefits  High Frequency Op.

Features

 Temperature Independent Switching Behavior
 Low Conduction and Switching Loss
 High Surge Current Capability
 Positive Temperature Coefficient on VF
 Fast Reverse Recovery Mechanical Data
 Case: Molded plastic, TO-220AC
 Marking: 10A065T Benefits
 High Frequency Operation
 Higher System Efficiency
 Environmental Protection
 Parallel Device Convenience
 Hard Switching & High Reliability
 High Temperature Application TO-220AC Unit: inch(mm) Maximum Ratings PARAMETER Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Continuous Forward Cur.